| PART |
Description |
Maker |
| CYM74S551PM-50C CYM74P550APM-50C |
x64 Interleaved Burst Mode SRAM Module X64的交错突发模式的SRAM模块
|
Intel, Corp.
HIROSE ELECTRIC Co., Ltd.
|
| MT8LD264G-7XS MT8LD264G-7S |
x64 EDO Page Mode DRAM Module
x64 Fast Page Mode DRAM Module X64的快速页面模式内存模
|
Micron Technology, Inc.
|
| R2A20117 |
critical mode interleaved PFC IC
|
Renesas
|
| R2A20118ASP R2A20118ASPW0 |
Critical Conduction Mode Interleaved PFC Control IC
|
Renesas Electronics Corporation
|
| HB56SW464DB-6L |
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Hitachi,Ltd.
|
| GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM
12ns 100MHz 32K x 32 1Mb synchronous burst SRAM
10ns 133MHz 32K x 32 1Mb synchronous burst SRAM
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
| BS320GBD4V BS320GTD4V AM29BDS320GBD9VMI AM29BDS320 |
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 2M X 16 FLASH 1.8V PROM, 90 ns, PBGA64
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 32兆位米16位）.8伏，只有同时写，突发模式闪存
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA64
|
Spansion Inc.
Spansion, Inc.
|
| PCD5042 PCD5042HZ |
DECT burst mode controller
|
NXP Semiconductors
|
| PCD5041 PCD5041H PCD5041HZ |
DECT burst mode controller
|
NXP Semiconductors
Philips Semiconductors
|
| S29NS128J0LBJW000 S29NS064J0LBJW000 S29NS032J0LBJW |
Burst Mode Flash Memories
|
SPANSION
|
| S75NS128N |
Burst-mode Multiplexed Flash
|
SPANSION
|
